Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe. Millimeter thin and rubber-like solid-state lighting modules fabricated using roll-to-roll fluidic self-assembly and lamination.
Elastomer surfaces with directionally dependent adhesion strength and their use in transfer printing with continuous roll-to-roll applications. Inorganic light-emitting diode displays using micro-transfer printing. More than microLEDs: mass transfer of pixel engines for emissive displays. Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes. Design and fabrication of fine-pitch pixelated-addressed micro-LED arrays on printed circuit board for display and communication applications. 48 × 48 pixelated addressable full-color micro display based on flip-chip micro LEDs. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Polarity governs atomic interaction through two-dimensional materials. Mixed-dimensional van der Waals heterostructures. Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting. Stretchable active matrix inorganic light-emitting diode display enabled by overlay-aligned roll-transfer printing. Recent advances in flexible inorganic light emitting diodes: from materials design to integrated optoelectronic platforms. This strategy represents a promising route to attain heterogeneous integration, which is essential for high-performance optoelectronic systems that can incorporate the established semiconductor technology and emerging two-dimensional materials. In addition, we demonstrate a simple approach to obtain red and green colours through the printing of quantum dots on a blue micro-LED, which allows for the scalable fabrication of full-colour micro-LED displays. Subsequently, the MoS 2 thin film transistor was monolithically integrated with micro-light-emitting-diode (micro-LED) devices to produce an active matrix micro-LED display.
We show how a thin film of molybdenum disulfide (MoS 2) can be directly synthesized on a gallium-nitride-based epitaxial wafer to form a thin film transistor array. Here we present a novel transition metal dichalcogenide-on-compound-semiconductor fabrication method that is compatible with a batch microfabrication process.
Large-scale growth of transition metal dichalcogenides and their subsequent integration with compound semiconductors is one of the major obstacles for two-dimensional materials implementation in optoelectronics applications such as active matrix displays or optical sensors.
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